MOS half-bridge drive circuit, particularly for power MOS half-bridges
US5376832A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1993 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Mar 11, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/6877
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A drive circuit includes a voltage source supplying a reference voltage at its output; a voltage elevating circuit connected to a supply voltage and to the output of the voltage source, and supplying at its output, under normal operating conditions, a drive voltage greater than the supply voltage and increasing with the reference voltage. The input of the voltage source is connected to the output of the voltage elevating circuit, and defines a positive feedback path resulting in an increase in the reference voltage corresponding to an increase in the drive voltage, and therefore results in a corresponding increase in the drive voltage up to a maximum permissible value, thus providing for a sufficient drive voltage for driving the gate-source junction of power MOS transistors, even in the presence of a low supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.