Substrate bias voltage generator having current ability based on external and internal power voltages
US5376840A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 27, 1992 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Nov 27, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/07
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
An LSI including a voltage drop circuit for receiving a voltage from an external power source and generating an internal power source voltage, a substrate biasing voltage generator circuit for generating a substrate biasing voltage, and a power on circuit for monitoring a voltage rising rate of the external power source and producing a control signal. The substrate biasing voltage generator circuit operates, in accordance with conditions of the control signal, to generate the substrate bias voltage having a first current capability based on the external power voltage or the substrate bias voltage having a second current capability based on the internal power source voltage. Thus, the LSI eliminates delay of start of operation of the LSI and reduces power consumption by the LSI due to a delay in the increase of the internal power source voltage which operates the substrate biasing voltage generator circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.