Cell for random access memory
US5377140A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 10, 1993 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Nov 10, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The memory ratio is improved and the data holding ability on reading data is enhanced by providing a resistive element between an access transistor and a flip-flop, which form a memory cell of a static memory. Even if the threshold voltage of the access transistor is lowered, the memory cell ratio can be increased. Accordingly, the minimum operating voltage can be lowered and the operating margin for a power source voltage can be increased and simultaneously with this, the soft error immunity can be enhanced. Since the memory cell ratio of the semiconductor memory of the present invention is enhanced by the resistive element, the necessity to preset a lower current drive ability of the access transistor for a drive transistor is decreased. As a result of this, the size of the memory cell can be decreased. Further, the current consumed by the memory cell is decreased by the resistive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.