Semiconductor memory having data preset function
US5377142A · kind A · utility
11Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1993 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Apr 13, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4072
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A DRAM having a data preset function is disclosed. A memory cell includes connectors which are formed of contact holes or through holes and which can be selectively formed in order to program preset data. For example, when preset data "0" is programmed, connectors are formed, and connector 17 is not formed. When a data precharge signal of a high level is applied, a transistor is turned on and as a result, a data storage capacitor is discharged. In other words, predetermined data is written into capacitor. Thus, the DRAM having the data preset function is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.