High durability mask for dry etch processing of GaAs
US5378316A · kind A · utility
174Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1993 |
| Grant date | Jan 3, 1995 |
| Priority date | — |
| Expiry date | Jan 7, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3081
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mask is described which enables the fabrication of features in GaAs such as waveguides, channels, facets, mesas, and mirrors by dry etch processing in chlorine containing ambients. The mask consists of an amorphous form of carbon which may contain incorporated hydrogen. The mask can be applied, patterned and removed through dry processing techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.