Evaporation method of forming transparent barrier film
US5378506A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 10, 1993 |
| Grant date | Jan 3, 1995 |
| Priority date | — |
| Expiry date | May 10, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/081
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention relates to a source material for vapor deposition, which is useful for forming a magnesium oxide thin film by vacuum vapor deposition process, and to a method of forming a transparent barrier film by using the magnesium oxide source material. The source material is composed of a magnesium oxide having a bulk density of 2.5 g/ml or more. This magnesium oxide can be obtained by sintering or fusing magnesium oxide material. For producing a transparent barrier film having a gas barrier property, this magnesium oxide is vapor-deposited on a surface of a transparent plastic base film by means of vacuum vapor deposition. The volume shrinkage or cracking of the evaporation source material can be avoided, thereby stabilizing the evaporation and prolonging duration of the evaporation. Further, it is possible to utilize a high power of electron beam. Since the evaporation source material is substantially free from pore, the evacuation of gas from the evaporation apparatus can be finished within a short period of time, and the vacuum degree within the evaporation apparatus can be stabilized. Since there is no splash or scattering during the evaporation., a transparent barrier fi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.