Method of making a silicon carbide junction field effect transistor device for high temperature applications

US5378642A · kind A · utility

Assignee

• General Electric Company · US

Inventors

• Dale M. Brown · Schenectady, US
• Mario Ghezzo · Ballston Lake, US

Key dates

• Filing date: Apr 19, 1993
• Grant date: Jan 3, 1995
• Expiry date: Apr 19, 2013

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/931

Abstract

A silicon carbide (SiC) junction field effect transistor (JFET) device is fabricated upon a substrate layer, such as a p type conductivity SiC substrate, using ion implantation for the source and drain areas. A SiC p type conductivity layer is epitaxially grown on the substrate. A SiC n type conductivity layer is formed by ion implantation or epitaxial deposition upon the p type layer. The contacting surfaces of the p and n type layers form a junction. A p+ type gate area supported by the n type layer is formed either by the process of ion implantation or the process of depositing and patterning a second p type layer. The source and drain areas are heavily doped to n+ type conductivity by implanting donor ions in the n type layer.