Patterning process including simultaneous deposition and ion milling
US5378658A · kind A · utility
11Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1992 |
| Grant date | Jan 3, 1995 |
| Priority date | — |
| Expiry date | Sep 28, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/143
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for forming a pattern on a substrate which includes depositing a film-forming material from above a mask formed on the substrate and forming a film on the mask and in regions of the substrate not covered by the mask, wherein the film formation is carried out while irradiating an ion beam towards the mask so that the deposition on the side surface portion of a deposition material being deposited on the mask is inhibited by ion milling. An electronic device such as a micro field emission cathode or a multi-layer circuit structure is effectively formed using the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.