Electron beam addressed electro-optical light valve having input openings
US5379136A · kind A · utility
Inventors
Key dates
| Filing date | Oct 4, 1993 |
| Grant date | Jan 3, 1995 |
| Priority date | — |
| Expiry date | Oct 4, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electron beam addressed electro-optical (EO) light valve (EOLV) having a matrix of openings formed on and extending through an input conductive layer and further extends into an electrically insulating layer. A partially conductive coating is formed on the surface of each opening in the insulating layer, and has a substantially good electrical contact with the input conductive layer. An EO layer, formed of either a liquid crystal (LC) or a solid state EO crystal, is positioned on the optical output side of the insulating layer. Through the openings electrons from a scanning electron beam can reach and be directly deposited on the partially conductive coatings at a depth substantially close to the EO layer and substantially far away from the input conductive layer. The insulating material surrounding the openings in the insulating layer strictly prevents these deposited electrons from inter-opening motion. These deposited electrons are then discharged along the partially conductive coatings to the input conductive layer before the next scanning cycle. Accordingly, a precisely controllable voltage across each pixel of the EO layer can be obtained. This makes it possible to obtain …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.