Method of growing single crystal of compound semiconductors
US5379717A · kind A · utility
2Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 1993 |
| Grant date | Jan 10, 1995 |
| Priority date | — |
| Expiry date | May 18, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing a single semiconductor crystal with a flat top. In order to grow a single flat top crystal, the InP crystal is pulled up after the temperature drop of the melt has almost stopped, at a point in time when a meniscus at the interface of solid-liquid can be seen over the whole circumference of the surface of the melt. This prevents a facet from appearing at the shoulder portion of the crystal, thus reducing the generation of twin crystals and drastically improves retension of single crystal formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.