Method of deposition by molecular beam epitaxy
US5379719A · kind A · utility
4Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1993 |
| Grant date | Jan 10, 1995 |
| Priority date | — |
| Expiry date | Jul 26, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B23/002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.