Method for selectively etching AlGaAs
US5380398A · kind A · utility
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2References
7Claims
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Key dates
| Filing date | Nov 25, 1992 |
| Grant date | Jan 10, 1995 |
| Priority date | — |
| Expiry date | Nov 25, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30621
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for semiconductor device fabrication that uses a mixture of SiCl.sub.4, CF.sub.4, O.sub.2, and He to selectively etch GaAs with respect to AlGaAs. Etch selectivities greater than 300:1 are obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.