Methods for the formation of a silicon oxide film
US5380555A · kind A · utility
40Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1994 |
| Grant date | Jan 10, 1995 |
| Priority date | — |
| Expiry date | Jan 26, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a method for the formation of ceramic silicon oxide films on substrate surfaces wherein said films are thick, free of cracks and pinholes, and insoluble in organic solvents. These films are formed by coating the surface of a substrate with a silicon resin having the general formula EQU (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0 wherein R is selected from the set comprising the hydrogen atom, alkyl groups, and aryl groups, and 0.1.ltoreq.X.ltoreq.2.0, and then heating the coated substrate to convert the coating into a ceramic silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.