Uniaxially strained semiconductor multiple quantum well device using direction-dependent thermal expansion coefficients in a host substrate
US5381260A · kind A · utility
12Cited by
3References
4Claims
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Key dates
| Filing date | Nov 19, 1993 |
| Grant date | Jan 10, 1995 |
| Priority date | — |
| Expiry date | Nov 19, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is a spatial light modulator which uses an uniaxially trained multiple quantum well (MQW) structure with an anisotropic absorption to rotate the polarization of light normal to the MQW structure. The anisotropy which produces this rotation is the result of a thermally induced in-plane anisotropic strain. The MQW light modulator based on this process has a high contrast ratio of 7000:1 and increased speed as compared to other similar modulators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.