Process for reduced stress tungsten deposition
US5382340A · kind A · utility
4Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1993 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Dec 14, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.