Near-resonant laser sputtering method
US5382457A · kind A · utility
26Cited by
2References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1993 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Sep 30, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/28
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for sputtering atoms from a target made of a group II metal using a laser is provided. A sputter target and substrate are located in a vacuum chamber. The laser frequency is chosen to be near-resonant with an electronic transition in the group II metal from a ground state to an excited metastable state. As the sputtered atoms leave the target surface, the near-resonant laser energy excites the sputtered atoms. The excited atoms are sputtered into an ambient of molecules containing group VI atoms in the vacuum chamber where they react to form a II-VI compound that deposits on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.