Semiconductor device manufacturing method capable of correctly forming active regions
US5382543A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1993 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Jul 22, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of manufacturing a semiconductor device, first strip dielectrics (33) and surfaces (35) were formed by taking first strip parts (31) of a dielectric layer (29) away from a principal surface (13) of a semiconductor substrate (11) in parallel by using a photo-lithography method. Active regions (43) were formed on the first strip surfaces (35) by using a metal organic vapor phase epitaxy method to be covered with lattice planes each of which is (111)B. Second strip dielectrics (35) and surfaces (47) were formed by taking second strip parts (31a) of the first strip dielectrics (31) away from the principal surface (13) with the second strip surfaces (47) positioned between the active regions (43) and the second strip dielectrics (45). Current block regions (57) were formed on the second strip surfaces (47) and the active regions (43) by using the metal organic vapor phase epitaxy method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.