Photoconductive material
US5382787A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1992 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Jul 7, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/10
Abstract
The invention provides a temperature switch material capable of detecting a very low temperature not higher than 150 K. It also provides a light switch material for detecting light in the ultraviolet region. It further provides a switch material suited for use as a substrate for thin oxide layer formation thereon. The switching material utilizes an abrupt change in photoelectric current as produced upon phase transition of SrTiO.sub.3 at a low temperature. The photoelectric switch or temperature switch utilizes the change in photoconduction spectrum upon irradiation of SrTiO.sub.3 with light in the 3 eV-5 eV ultraviolet region. A switch is available by varying the intensity of irradiating light thereby controlling the transition temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.