Stacked high voltage transistor unit
US5382826A · kind A · utility
67Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1993 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Dec 21, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high current, high voltage transistor which can be easily electrically stacked to extend the voltage range and uses less silicon area than a conventional stacked transistor configuration and a configuration of field plates that provide the greatest breakdown voltages with the highest ohmic values. Also, a star shaped field plate design which provides the greatest breakdown voltages with the highest ohmic values. The field plate is constructed using several concentric rings connected by fingers that are wider at towards the center of the concentric rings and narrower towards the perimeter of the concentric rings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.