Semiconductor memory device
US5383150A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1994 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Jan 19, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric capacitor and another ferroelectric capacitor or dielectric capacitor have one of their electrodes commonly connected to an address selection switching element with its gate connected to a word line and the other of their electrodes connected to first and second plate voltage supply line, respectively. Two operation modes are provided. A first operation mode has a first voltage supplied to a first plate voltage supply line and a second voltage to a second plate voltage supply line. A second operation mode has the second voltage supplied to the first plate voltage supply line and the first voltage to the second plate voltage supply line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.