Semiconductor device with current confinement structure
US5383213A · kind A · utility
4Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 7, 1993 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | May 7, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a semiconductor device comprising a current confinement structure capable of reducing leakage currents. The semiconductor device comprising a current confinement structure and a multiquantum barrier structure 10 disposed in said current confinement structure and having an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.