Semiconductor laser and a method for producing the same
US5383214A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1993 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Jul 15, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.