Process for production of silicon nitride material
US5384081A · kind A · utility
6Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1993 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Sep 24, 2013 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF16C33/30
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention relates to a process for the production of a dense Si.sub.3 N.sub.4 material by normal pressure sintering of mouldings which have been manufactured from mixtures of Si.sub.3 N.sub.4 powders and sintering additives without being embedded in a powder packing and are sintered at temperatures of 1775.degree. C.+-. 75.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.