Method of fabricating a memory device with a multilayer insulating film
US5384276A · kind A · utility
18Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1992 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Jul 2, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is disclosed. The method comprises the steps of: forming a multi-layer film comprising two or more kinds of layers; performing first etching for patterning said multi-layer film under a first etching condition; and performing second etching for forming irregularities in the side faces of said patterned multi-layer film under a second etching condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.