Antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof
US5384481A · kind A · utility
23Cited by
32References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1993 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Apr 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An antifuse structure particularly suitable for field programmable gate arrays is presented. In most present day processes the antifuse structure is formed with a refractory metal layer, amorphous silicon layer and refractory metal layer sandwiched between two metal interconnection lines. Unprogrammed resistances of very high values, programmed resistances of very low values, short programming times and desirable programming voltages are among the advantages realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.