Shrouded pin electrode structure for RF excited gas discharge light sources
US5384515A · kind A · utility
6Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1992 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Nov 2, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J65/046
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A shrouded pin electrode structure including an elongated pin that extends into the volume of a gas containment structure of an RF excited gas discharge light source and is physically isolated from the discharge gas contained in the volume of the gas containment structure by a shroud structure made for example of a gas impermeable dielectric coating or closed end tube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.