Monolithic multi-wavelength laser diode array
US5384797A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 21, 1992 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Sep 21, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithic multi-wavelength laser diode array having a composite active region of at least two dissimilar quantum well layers that are partially mixed in at least one of their constituent atomic species in at least one area of the active region. Different areas of the active region are characterized by different emission wavelengths determined by the degree of intermixing. An impurity free interdiffusion, such as vacancy enhanced interdiffusion, is used to provide the intermixing. Each area may have one or more waveguides and distributed Bragg reflector gratings tuned to the emission wavelength of the corresponding area of the active region. Each area or waveguide may also be separately pumped with an individually addressable current injection electrode. The laser output may be coupled into a ferroelectric frequency doubler integrally formed on the array substrate. The frequency doubler has periodically poled waveguides for quasi-phase matching in front of areas of the laser array emitting light which is to be doubled in frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.