Digital electrochemical etching of compound semiconductors
US5385651A · kind A · utility
7Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 1993 |
| Grant date | Jan 31, 1995 |
| Priority date | — |
| Expiry date | May 28, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/465
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the digital electrochemical etching of compound semiconductors in an electrochemical flow cell system in which alternating electrochemical potentials are applied between a reference electrode and the compound semiconductor sufficient to strip portions, preferably atomic layers, of the elements of compound semiconductors from the compound semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.