Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface

US5385865A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Johannes Nieder · Stuttgart, DE
• Peter Grambow · Stuttgart, DE
• Herbert Lage · Bad Liebenzell, DE
• Klaus Ploog · Stuttgart, DE
• Andreas Wieck · Sindelfingen, DE
• Detlef Heitmann · Borstel-Hohenraden, DE
• Klaus von Klitzing · Stuttgart, DE

Key dates

• Filing date: Jul 3, 1991
• Grant date: Jan 31, 1995
• Expiry date: Jul 3, 2011

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/91
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A novel unipolar transistor device has been realized starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. A 600 nm wide 1D channel is insulated laterally from 2DES regimes by 700 nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral-field effect of the adjacent 2DES-gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room temperature operation is demonstrated yielding a 161S transconductance corresponding to 160 mS/mm 2D transconductance.