Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

US5386128A · kind A · utility

Assignee

• The United States of America as represented by the Administrator of the National Aeronautics and Space Administration · US

Inventors

• Eric R. Fossum · La Cañada Flintridge, US
• Thomas J. Cunningham · Pasadena, US
• Timothy N. Krabach · Valencia, US
• Craig O. Staller · Burbank, US

Key dates

• Filing date: Jan 21, 1994
• Grant date: Jan 31, 1995
• Expiry date: Jan 21, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/153

Abstract

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.