Stacked active region laser array for multicolor emissions
US5386428A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1993 |
| Grant date | Jan 31, 1995 |
| Priority date | — |
| Expiry date | Nov 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Monolithic arrays having closely spaced laser stripes which output laser beams with large, but well-controlled, wavelength separations. The monolithic array uses a plurality of stacked active regions which are stacked in the order of decreasing energy bandgaps as one moves away from the substrate. Those active regions are separated by one or more thin etch stop layers. Between the bottom active regions and the substrate is a lower cladding layer, while over the topmost active region of each stack is an upper cladding layer. Beneficially, an electrical connection is made to each stack using a heavily doped capping layer/metallic contact above each stack and a metallic contact on the substrate (which is shared by all stacks). Lateral carrier and optical confinement is achieved using a confinement layer which surrounds each stack. Beneficially, that confinement layer is formed using layer induced disordering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.