Production method of a MESFET semiconductor device
US5387529A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 16, 1993 |
| Grant date | Feb 7, 1995 |
| Priority date | — |
| Expiry date | Nov 16, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A particle beam irradiates a thermohardening resin and selectively hardens the thermohardening resin of the implanted region. The non-hardened resin not irradiated is removed with high selectivity and an inverted pattern of the hardened resin remains as a mask. Using the same photoresist mask employed in the irradiation for selective hardening, ion implantation through the hardened resin forms spaced apart implanted regions in the substrate. The removal of the photoresist and the non-hardened resin leaves an aperture for metal deposition to form Schottky barrier. Hardened resin from portions of spaced apart implanted regions is removed, followed by metal deposition forming source and drain electrodes to complete a MESFET. Spin-on-glass as the thermohardening resin is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.