Process for manufacturing isolated semiconductor components in a semiconductor wafer
US5387537A · kind A · utility
3Cited by
7References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 20, 1992 |
| Grant date | Feb 7, 1995 |
| Priority date | — |
| Expiry date | Aug 20, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for manufacturing isolated semiconductor components in a semiconductor wafer of the type used in bipolar technology. In this process, polycrystalline silicon is deposited in a recess in a silicon substrate whose walls are insulated by a silicon nitride layer except for an opening formed in this nitride layer at the bottom of said recess. Then, the polycrystalline silicon is recrystallized so as to become monocrystalline silicon by thermal heating from the "nucleus" formed by the underlying silicon in said opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.