Light emitting diode
US5387804A · kind A · utility
68Cited by
9References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1992 |
| Grant date | Feb 7, 1995 |
| Priority date | — |
| Expiry date | Sep 14, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/826
Abstract
A light emitting diode is disclosed which comprises at least one heterojunction composed of silicon carbide (SIC) and semiconductor materials selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga.sub.x Al.sub.1-x N, 0<x<1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.