Transistors with emitters having at least three sides
US5387813A · kind A · utility
15Cited by
13References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1992 |
| Grant date | Feb 7, 1995 |
| Priority date | — |
| Expiry date | Dec 14, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/138
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor is provided in which the base-emitter junctions do not traverse the base but terminate inside the top surface of the base. The transistor has long emitter perimeter available for current flow and more than two emitter sides (e.g., three sides) available for current flow, which allows obtaining a low base resistance, a low emitter resistance, a low collector resistance, a low base-collector capacitance, and a small size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.