Semiconductor memory device having current to voltage conversion type amplifier
US5388078A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 12, 1991 |
| Grant date | Feb 7, 1995 |
| Priority date | — |
| Expiry date | Jul 12, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device of the present invention includes a sense amplifier for converting an electrical current flowing through a sense node between a load and a current limiting circuit into an electrical voltage and for outputting the produced electrical voltage. The sense amplifier is constituted by plural stage amplifiers each of which may be shorted across it input and output terminals. The amplifiers are set to the amplifying state, stage by stage, starting at the amplifier closest to the node, for overcoming problems concerned with noise superposition or an output delay caused by bit line overcharging. In a preferred embodiment, MOS transistors for electrical discharging or precharging are provided in the bit line or the sense node for speeding up the operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.