Low bandgap photovoltaic cell with inherent bypass diode
US5389158A · kind A · utility
105Cited by
9References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1993 |
| Grant date | Feb 14, 1995 |
| Priority date | — |
| Expiry date | Jul 26, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/293
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photovoltaic (PV) cell with a single pn-junction is disclosed that is capable of functioning as both a current source and a bypass diode. The photovoltaic cell is made of material that has a low bandgap energy, 1.0 eV, or less. One version of the PV cell is formed of a GaSb wafer doped with Te to form an n-region; the Te concentration is between 6 and 10.times.10.sup.17 atoms/cm.sup.3. Multiple PV cells of this invention can be connected in series or in parallel or in tandem in a primary-booster tandem pair to form a circuit without the requirement of protecting the individual cells of the circuit with a separate bypass diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.