Structure and method of manufacturing the same
US5389198A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 23, 1991 |
| Grant date | Feb 14, 1995 |
| Priority date | — |
| Expiry date | Sep 23, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing structures such as a pressure gauge, an accelerometer and the like with a single crystal material such as silicon uses etching techniques where the shape of a part subjected to stress concentration has a curvature, another part is formed in a plane body and a polyhedron is constituted by combining both. To attain the above constitution, a wafer of single crystal material is formed with a stepped surface having a value corresponding to at least the depth of the curvature in a first anisotropic etching process using a prescribed etching mask, and in a second anisotropic etching process, an etching mask is used by removing at least a part of the etching mask used in the first anisotropic etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.