Methods for fabrication of transistors

US5389553A · kind A · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Michael J. Grubisich · San Jose, US
• Ali A. Iranmanesh · Federal Way, US

Key dates

• Filing date: Jun 30, 1993
• Grant date: Feb 14, 1995
• Expiry date: Jun 30, 2013

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/009

Abstract

In a bipolar transistor, the collector and the base are formed in an isolation region laterally bounded by a field insulator. The isolation region corners are spaced far from the emitter to reduce the collector-emitter leakage current. The base does not extend laterally throughout the isolation region. Thus the base is small and the collector-base capacitance is small as a result. Those corners of the isolation region that are not covered by a base contact region are covered and contacted by an insulator. This insulator prevents the field insulator from being pulled back during wafer clean steps. Consequently, the field insulator does not expose the collector. Further, the insulator covering the corners prevents the metal silicide on the surface of the extrinsic base from contacting the corners. The insulator overlying the corners thus reduces the collector-base leakage current.