Thin film capacitors
US5390072A · kind A · utility
40Cited by
7References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 1992 |
| Grant date | Feb 14, 1995 |
| Priority date | — |
| Expiry date | Sep 17, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for forming a high capacitance thin film capacitor comprising forming an amorphous layer of a dielectric material on the surface of a polycrystalline layer of said dielectric material and arranging the resulting double layer between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.