Semiconductor laser that generates second harmonic light with attached nonlinear crystal
US5390210A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1993 |
| Grant date | Feb 14, 1995 |
| Priority date | — |
| Expiry date | Nov 22, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser with a nonlinear crystal that generates second harmonic light at a frequency which is twice the fundamental frequency of the laser. The laser is configured in a vertical-cavity, surface-emitting structure or an edge-emitting structure. A nonlinear crystal is attached to a semiconductor optical amplifier by fusing with wafer bonding techniques or by epitaxially growing the nonlinear crystal on the amplifier. The amplifier and the nonlinear crystal are located inside a laser cavity that is defined between a pair of reflectors. One of the reflectors is located adjacent the nonlinear crystal and is highly reflective at the fundamental frequency but transmissive at twice the fundamental frequency. Light is generated at the fundamental frequency, doubled in frequency as it passes back and forth through the nonlinear crystal, and emitted through the reflector adjacent the nonlinear crystal. An optional region between the amplifier and the nonlinear crystal prevents reflections at the fundamental frequency or prevents light at twice the fundamental frequency from propagating from the nonlinear crystal into the amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.