Manufacturing method for semiconductor devices with source/drain formed in substrate projection.
US5391506A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1993 |
| Grant date | Feb 21, 1995 |
| Priority date | — |
| Expiry date | Jan 27, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A projection is formed in a substrate by anisotropic etching and a transistor is contained in the projection. The central portion of the projection covered with a gate electrode is formed as a channel region, and drain and source regions are formed on both sides of the projection by oblique ion implantation with the gate electrode as a mask. Formed below the drain, source, and channel regions is an element isolation section having the composition of the substrate intact. This eliminates the need for an oxide insulating layer below the transistor for easy manufacturing. Carriers generated in the channel region by ionization by collision can also be discharged to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.