Programmable read only memory with output indicating programming state
US5392418A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 14, 1992 |
| Grant date | Feb 21, 1995 |
| Priority date | — |
| Expiry date | Feb 14, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory cell including a pn diode and a circuit for sensing the logic state of the pn diode such that a logic one state indicates that the diode is in its normal state, while the other logic state is created by fusing the diode for creating a short circuit. The circuit for sensing the logic state of the diode includes a circuit for developing a sense voltage across the diode, a first comparator for comparing the sense voltage with a first reference voltage greater than the normal junction voltage, a second comparator for comparing the sense voltage with a second reference voltage less than the normal junction voltage but greater than the fused junction voltage and a circuit responsive to the outputs of the first and second comparators to provide an output signal which has a first value if the sense voltage is between the first and second reference voltages and a second value if the sense voltage is not between the first and second reference voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.