Method of producing silicon single crystal
US5392729A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 26, 1990 |
| Grant date | Feb 28, 1995 |
| Priority date | — |
| Expiry date | Sep 26, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1052
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.