Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride
US5393699A · kind A · utility
26Cited by
13References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 30, 1992 |
| Grant date | Feb 28, 1995 |
| Priority date | — |
| Expiry date | Oct 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.