Semiconductor device and manufacturing method of the same
US5394012A · kind A · utility
39Cited by
4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 14, 1993 |
| Grant date | Feb 28, 1995 |
| Priority date | — |
| Expiry date | Oct 14, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/711
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Source/drain diffusion regions are formed at a surface of a silicon substrate, which is substantially flat and has a first surface roughness. Surfaces of the source/drain diffusion regions are covered with a polysilicon film having a surface which has a second surface roughness larger than the first surface roughness. The polysilicon film is removed by etching to expose the surfaces of the source/drain diffusion regions. Owing to this etching for removal, the surfaces of the source/drain diffusion regions have a third surface roughness larger than the first surface roughness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.