Semiconductor laser device including a step electrode in a form of eaves
US5394421A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1993 |
| Grant date | Feb 28, 1995 |
| Priority date | — |
| Expiry date | Dec 6, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A highly reliable semiconductor laser device capable of exhibiting a good current-light output characteristic and a fabrication process therefore is provided. The semiconductor laser device is provided with a step in a region adjacent a laser-light-emitting edge to separate an upper electrode into two, one of which is located adjacent the laser-light-emitting edge and does not allow current to flow in the underlying portion even if the other is applied with voltage, thereby forming a current-noninjection region in the region adjacent the later-light-emtting edge. Due to such an arrangement, deterioration of device characteristics due to local heat generation can be assuredly prevented without changing the structure adjacent the active layer and the current-confining structure which dominate the characteristics of the semiconductor laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.