Semiconductor laser device
US5394424A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1993 |
| Grant date | Feb 28, 1995 |
| Priority date | — |
| Expiry date | Jul 14, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a semiconductor laser device capable of emitting a laser beam having stable transverse modes. A ridge type semiconductor laser device comprises an upper clad layer 15 left on its active layer to a thickness (d) between 0.25 and 0.50 m in order to ensure a stable production of fundamental transverse modes for laser operation and a rib-shaped clad layer 16 having a bottom width (W) between 2.0 .mu.m and 3.5 .mu.m and projecting from the upper clad layer in juxtaposition with the light emitting region of the active layer 13. When d and W are found within the respective ranges, the device emits a laser beam having stable transverse modes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.