Method and apparatus for growing shaped crystals
US5394825A · kind A · utility
18Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1992 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Feb 28, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/104
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high temperature heat exchanger is used with the Czochralski crystal growing method to control the heat extraction from crystal silicon ingots as they are grown. The high temperature heat exchanger also acts as a shaping die so that silicon bars, or ingots, of various shapes, including square, circular, rectangular or ribbon, can be produced by shaping during the growth stage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.