Process for producing a perovskite film by irradiating a target of the perovskite with a laser beam and simultaneously irradiating the substrate upon which the perovskite is deposited with a laser beam
US5395663A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1993 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Apr 26, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a process for producing a dielectric thin film of a perovskite oxide on a substrate by a vapor-deposition process which includes vaporizing the oxide and irradiating the oxide vapor or the substrate with a laser beam. There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.